Samsung scientists are working on a new type of memory that could bring together RAM-like speeds and SSD capabilities

Samsung used advanced computer modeling to accelerate the development of Selector-Only Memory (SOM), a new memory technology that combines non-volatility with DRAM-like read/write speeds and stackability.

Building on the company’s previous research in the field, SOM is based on cross-point memory architectures, similar to phase-shift memory and resistive RAM (RRAM), in which stacked arrays of electrodes are used. Typically, these architectures require a selector transistor or diode to address specific memory cells and prevent unintended electrical paths.

Samsung took a novel approach by exploring chalcogenide-based materials that function as both a selector and a memory element, introducing a new form of non-volatile memory.

A broader search

eeNews Analog reports that Samsung researchers will present their findings at this year’s International Electronic Devices Meeting (IEDM), taking place between December 7-11, in San Francisco. The South Korean technology giant will discuss how it has analyzed a wide range of chalcogenide materials for SOM applications.

Samsung says its study explored more than 4,000 material combinations, narrowing them down to 18 promising candidates using Ab-initio-based computer modeling (see diagram at top of page). The focus was on improving the threshold voltage drift and optimizing the memory window – two key factors in SOM performance.

Traditional SOM research has been limited to the use of Ge, As, and Se chalcogenide systems found in ovonic threshold switches (OTS). However, Samsung says its comprehensive modeling process allowed for a broader search, taking into account the bonding characteristics, thermal stability and reliability of the device to improve performance and efficiency.

In a later IEDM presentation, eeNews Analog reports, IMEC researchers will discuss possible atomic mechanisms, such as local atomic bond rearrangement and atomic segregation, which could explain how the selector component of the SOM works, further influencing the threshold voltage – an important factor in memory performance.